Samsung 860 EVO 500GB 2.5 '' SATA 3 SSD Hard Disk

Samsung 860 EVO 500GB 2.5 ' ' SATA 3SSD

We present you with the new version of the SATA SSD l &iuterer sales, the Samsung 860 EVO. The new SSD features the Samsung V-NAND Samsung and a robust algorithm-based controller, and is available in different formats and capabilities.

Enjoy constant speed even with large workloads and multitasking. Samsung's SSD 860 EVO drive provides a sequential write speed of up to 520 MB/s thanks to the Intelligent TurboWrite íg technology, and a sequential write rate of up to 550 MB/s. The Tama ñ or the TurboWrite buffer has been improved from 12 GB to 78 GB, offering you a file transfer m &aecas r &arecute;

Securely stores and seamlessly renders and renders 3D data used by the latest applications, up to 8 times the TBW (Terabytes Written)     that the previous model 850 EVO. The latest technology í a V-NAND provides a reliability of the market with 5 to ñ s of garant í to or 2,400 TBW.

Benef &iacciate de una comunicaci &oatuten m áres r áres pípida y fluido con tu equipo. The new ECC   algorithm and its MJX driver generate high speed m &aasties, while its enhanced TRIM ó queue favors its compatibility with Linux. Our advanced engineer íos a har &aetuos our SSD 860 EVO m &aUteres compatible with your operating system.

Whatever the tama ñ or your computer, there will always be a SSD 860 EVO for you. Choose from the 2.5 ” model for your PC or port &atil, or the SATA M. 2 (2280) and mSATA for ultra-thin equipment. As simple.

Samsung 860 EVO Specifications:

• Series: SSD 860 EVO
• Interface: SATA 6 Gb/s interface, compatible with SATA 3 Gb/sy SATA 1.5 Gb/s interface
• Capacity: 500 GB *Actual usable capacity may be lower (due to formatting, partitions, operating system, applications, or others)
• Sequential read rate: Sequential reading up to 550 MB/s * Performance can vary sec &uendon of the system
• Sequential write speed: Up to 520 MB/s sequential write * Performance can vary sec &uatucn the hardware and configurationSystem &obution
• Random Read Rate: Random Read (4 KB, QD32): up to 98 000 random IOPS random read reads (4 KB, QD1): up to 10,000 random read IOPS
• * Performance can vary sec &uatuin the system's hardware and configuration
• Random write speed: Random write (4KB, QD32): up to 90,000 random write random write IOPS (4KB, QD1): up to 42,000 random write IOPS
• * Performance can vary sec &uendon hardware and configuration
• Samsung MJX Controller
• NAND Flash: Samsung V-NAND 3bit MLC
• Cach Memory: Samsung 512 MB low-power DDR4 SDRAM
• Trim Support: S &iactos
• Encryptaci 256-bit AES (Class 0) TCG/Opal IEEE1667 (encrypted drive)
• Reliability (MTBF): 1.5 million hours of reliability (MTBF)