Internal HDD SSD Samsung 870 EVO 1TB SATA 3

Samsung 870 EVO 1TB SATA 3SSD Hard Disk

We present the latest model of the world's sold SSD series. The 870 EVO is based on Samsung's pioneering technology technology, with improved performance and improved reliability and compatibility to meet the needs of all profiles, from content creators or professionals in the &aacutitica to d &iacitia users.

The 870 EVO reaches the maximum number of sequential read and write speeds on a SATA interface, with 560/530 MB/s respectively. Now you can enjoy the SSD performance at the professional level. The technology-smart TurboWrite technology speeds up write speeds and maintains high long-term performance with a large b &uatuerfer variable m &aecons large.

Providing up to 2400 TBW with a limited 5-to-ñ s garant, the 870 EVO meets the industry's highest standards. It supports tasks from the daily &aaistica to 8K video processing and comes equipped with the sixth generation VNAND and MKX controller &uoten that ensures a stable host experience.

The 870 EVO has passed compatibility tests with host systems and applications, including chipsets, motherboards, NAS, and video recording devices. As the latest technology íto in the series EVO m &aecons sold globally, the proven versatility of the 870 EVO is compatible with the systems and tasks of any user.

The upgrade to the 870 EVO is easy for anyone with a desktop or port PC that supports a 2.5-inch SATA form factor. Starting to enjoy this SSD is as easy as connecting the 870 EVO to a SATA slot and letting the migration software take care of the rest.

Make your disc work like magic. The new and improved Samsung Magician 6 software will keep your SSD under control. You can easily manage your disk with a wide range of tools, and you can keep the latest updates, monitor the status of the disk, or even improve its performance.

Specifications:

• Capacity: 1,000 GB
•   Format: 2.5 inch
•   Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
•   Dimensions: 100 X 69.85 X 6.8 (mm)
•   Weight: Approx 45.0g
•   Storage Memory: Samsung V-NAND 3bit MLC
•   Controller: Samsung MKX Controller
•   Cach Memory: Samsung 1 GB Low Power DDR4 SDRAM
• Special Features
  • TRIM Support: Compatible with TRIM
  •   Support S.M.A.R. T: Compatible with S. M. A. R. T
  •   GC (Garbage Collection): Auto Garbage Collection Algorithm
  •   Encryptaci &oacutin n: AES 256-bit Encryption (Class 0 ),TCG/Opal, IEEE1667 (Encrypted drive)
  •   Support Mode Suspense &obution on device: S &iactos
• Performance
  • Sequential reading: Sequential reading of Up to 560 MB/s *Performance can vary system hardware and configuration.
  •   sequential write: sequential write up to 530 MB/s *Performance can vary system hardware and configuration. ** Measured with the smart-to-smart TurboWrite technology enabled.
  •   Random reading (4KB, QD32): Up to 98,000 random read IOPS *Performance can vary system hardware and configuration. ** Measured with the smart-to-smart TurboWrite technology enabled.
  •   Random write (4KB, QD32): Up to 88,000 random read IOPS *Performance can vary system hardware and configuration. ** Measured with the smart-to-turn-smart-enabled technology.
  •   Random reading (4KB, QD1): Up to 13,000 random read IOPS *Performance can vary system hardware and configuration. ** Measured with the smart-to-turn-smart-enabled technology.
  •   Random write (4KB, QD1): Up to 36,000 random read IOPS *Performance can vary system hardware and configuration. ** Measured with the technology íg to TurboWrite smart activated.
  • Environment
    • Average power consumption: Average: 2.5 W *M &aUte; 4.0 W (r &aUte; mode) * The actual power consumption can vary by the hardware and the system configuration
    •   Consumer energy consumption can vary sec &uendon the hardware and the system configuration
    •   Supported voltage: 5V ± 5% Voltage allowed
    •  Durability (MTBF): 1.5 Million Hours Reliability (MTBF)
    •   Temperature: 0-70 ° C Operating Temperature
    •   Golpes: 1,500 G and 0.5 ms (half bosom)